DTU06N03 Datasheet, PDF (3/9 Pages) DinTek Semiconductor Co,.Ltd – TrenchFET® Gen III Power MOSFET

D56/
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
5
V_GS = 10 thru 4 V
64
4
48
3
32
V_GS = 3 V
16
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0030
0.0027
0.0024
V_GS = 4.5 V
2
T_C = 125 °C
1
T_C = 25 °C
0
0
1
2
T_C = - 55 °C
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6000
4800
C_iss
3600
0.0041
0.003
V_GS = 10 V
0.0015
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 15 V
V_DS = 10 V
V_DS = 20 V
6
4
2400
1200
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 20 A
1.5
V_GS = 10 V
1.3
V_GS = 4.5 V
1.1
2
0.9
0
0
16
32
48
64
80
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3