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| DTL9503_13 Datasheet, PDF (2/7 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30 V (D-S) MOSFET Compliant to RoHS Directive 2002/95/EC | |||
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DTL9503
www.din-tek.jp
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 125 °C
VDS = - 30 V, VGS = 0 V, TJ = 175 °C
VDS = -ï 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 30 A
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
VGS = - 10 V, ID = - 30 A, TJ = 175 °C
VGS = - 4.5 V, ID = - 20 A
VDS = - 15 V, ID = - 75 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
Reversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = - 15 V, VGS = - 10 V, ID = - 75 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 15 V, RL = 0.2 ï
ID ï - 75 A, VGEN = - 10 V, Rg = 2.5 ï
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb (TC = 25 °C)
Continuous Current
IS
Pulsed Current
Forward Voltagea
ISM
VSD
IF = - 75 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = - 75 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width ï£ 300 µs, duty cycle ï£ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
- 30
-1
- 120
20
Typ.
0.0055
0.008
9000
1565
715
160
32
30
25
225
150
210
- 1.2
55
2.5
0.07
Max.
-3
± 100
-1
- 50
- 250
0.013
0.020
0.033
0.016
240
40
360
240
340
- 75
- 240
- 1.5
100
5
0.25
Unit
V
nA
µA
A
ï
S
pF
nC
ns
A
V
ns
A
µC
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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