DTW2070 Datasheet, PDF (1/10 Pages) DinTek Semiconductor Co,.Ltd – Power MOSFET Low-Profile Through-Hole Fast Switching

Power MOSFET
DTW2070
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
200
V_GS = 10 V
70
13
39
Single
0.09
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Low-Profile Through-Hole
• Available in Tape and Reel
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
I²PAK
(TO-262)
D²PAK
(TO-263)
G
D
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
SYMBOL
V_DS
V_GS
I_D
I_DM
Single Pulse Avalanche Energy^{b, e}
E_AS
Avalanche Current^a
I_AR
Repetiitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
T_C = 25 °C
T_A = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 2.7 mH, R_g = 25 , I_AS = 18 A (see fig. 12).
c. I_SD 20 A, dI/dt  150 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
200
± 20
20
13
72
1.0
580
20
13
3.1
130
5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1