DTU15P03 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – TrenchFET Power MOSFET

P-Channel 30-V (D-S) MOSFET
D561
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.0125 at V_GS = - 10 V
0.0205 at V_GS = - 4.5 V
I_D (A)^d
- 14.9
- 11.6
Q_g (Typ.)
29.5 nC
TO-252
S
G
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
RoHS
COMPLIANT
GDS
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Limit
- 30
± 25
- 14.9
- 11.9
- 10.9^{a, b}
- 8.6^{a, b}
- 60
- 4.1
- 2.2^{a, b}
- 20
20
5.0
3.2
2.7^{a, b}
1.7^{a, b}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T_C = 25 °C.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
38
20
Maximum
46
25
Unit
V
A
mJ
W
°C
Unit
°C/W
1