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DTU09N03 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – Halogen-free According to IEC 61249-2-21
N-Channel 30 V (D-S) MOSFET
D56/
www.daysemi.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0051 at VGS = 10 V
30
0.0063 at VGS = 4.5 V
ID (A)
55d
55d
Qg (Typ.)
21.7
TO-252
GDS
Top View
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
RthJA
RthJC
Limit
30
± 20
55d
55d
100
40
80
59.5b
2.7
- 55 to 150
Limit
46
2.1
Unit
V
A
mJ
W
°C
Unit
°C/W
1