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DTS7001 Datasheet, PDF (1/7 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 60 V (D-S) MOSFET Halogen-free | |||
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P-Channel 60 V (D-S) MOSFET
DTS7001
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (ï)
- 60
5 at VGS = - 10 V
VGS(th) (V)
- 1 to - 3
ID (mA)
- 130
TO-236
(SOT-23)
G1
S2
3D
Top View
DTS01
S
G
D
P-Channel MOSFET
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠High-Side Switching
⢠Low On-Resistance: 5 ï
⢠Low Threshold: - 2 V (typ.)
⢠Fast Swtiching Speed: 20 ns (typ.)
⢠Low Input Capacitance: 20 pF (typ.)
⢠1200 V ESD Protection
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
⢠Battery Operated Systems
⢠Power Supply Converter Circuits
⢠Solid-State Relays
BENEFITS
⢠Ease in Driving Switches
⢠Low Offset (Error) Voltage
⢠Low-Voltage Operation
⢠High-Speed Circuits
⢠Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Power Dissipationa
Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Limit
- 60
± 20
- 130
- 105
- 800
350
140
350
- 55 to 150
Unit
V
mA
mW
°C/W
°C
1
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