DTS6504_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 30 V (D-S) MOSFET Halogen-free

N-Channel 30 V (D-S) MOSFET
DTS6504
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.030 at V_GS = 10 V
30
0.040 at V_GS = 4.5 V
I_D (A)^{a, e}
6
6
Q_g (Typ.)
4.2 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Low On-Resistance
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters, High Speed Switching
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 µs)
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
30
± 20
6^e
6^e
5.5^{b, c}
4.4^{b, c}
25
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
I_S
P_D
T_J, T_stg
2.1
1.1^{b, c}
2.5
1.6
1.3^{b, c}
0.8^{b, c}
- 55 to 150
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
R_thJA
R_thJF
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Typical
75
40
Maximum
100
50
Unit
V
A
W
°C
Unit
°C/W
1