DTS6503 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – Halogen-free According to IEC 61249-2-21

P-Channel 30-V (D-S) MOSFET

DT4
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.074 at V_GS = - 10 V
- 30
0.113 at V_GS = - 4.5 V
I_D (A)^a
- 5.1
- 4.1
Q_g (Typ.)
5.1 nC
3 mm
TSOP-6
Top V iew
1
6
2
5
3
4
2.85 mm
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 30
± 20
- 5.1
- 4.1
- 4.1^{b, c}
- 3.3^{b, c}
- 20
- 2.5
- 1.67^{b, c}
3.0
2.0
2.0^{b, c}
1.3^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
55
34
Maximum
62.5
41
Unit
V
A
W
°C
Unit
°C/W
1