DTS6400_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 60-V (D-S) MOSFET Halogen-free

N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.026 at V_GS = 10 V
60
0.036 at V_GS = 4.5 V
I_D (A)^a
4.5
2.1
Q_g (Typ.)
2.3 nC
TO-236
(SSOT23)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Battery Switch
• DC/DC Converter
G1
S2
3D
Top View
DTS6400
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
I_AS
E_AS
P_D
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Typical
90
60
Limit
60
± 20
4.5
1.8
2.9^{b, c}
1.5^{b, c}
8
1.39
0.91^{b, c}
6
1.8
1.66
1.06
1.09^{b, c}
0.7^{b, c}
- 55 to 150
Maximum
115
75
Unit
V
A
mJ
W
°C
Unit
°C/W
1