DTS3407 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30 V (D-S) MOSFET TrenchFET Power MOSFET

P-Channel 30 V (D-S) MOSFET
DTS3407
www.din-tek.jp
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
I_D (A)^a
0.046 at V_GS = - 10 V
- 5.6
- 30
0.051 at V_GS = - 6 V
- 4.4
0.054 at V_GS = - 4.5 V
- 3.9
Q_g (Typ.)
6.9 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
• DC/DC Converter
• Power Management
(SOT-23)
G1
S2
3D
Top View
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Symbol
R_thJA
R_thJF
Typical
100
60
Limit
- 30
± 20
- 5.6
-4
- 3.8^b,c
- 3^b,c
- 20
- 1.4
- 0.63^b,c
1.7
1.1
1.20^{b, c}
0.6^{b, c}
- 55 to 150
Maximum
130
75
Unit
V
A
W
°C
Unit
°C/W
1