DTS3402_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 30-V (D-S) MOSFET Halogen-free

N-Channel 30-V (D-S) MOSFET
DTS3402
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.058 at V_GS = 10 V
30
0.073 at V_GS = 4.5 V
I_D (A)^a
3.6
3.6
Q_g (Typ.)
2.1 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
DTS3402
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
30
± 20
3.6^a
3.3
3.3
2.7
15
1.4
0.9^{b, c}
1.7
1.1
1.1^{b, c}
0.7^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Typical
90
60
Maximum
115
75
Unit
V
A
W
°C
Unit
°C/W
1