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DTS3401 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – Halogen-free Option Available
P-Channel 30-V (D-S) MOSFET
DTS3401
www.daysemi.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.088 at VGS = - 10 V
0.138 at VGS = - 4.5 V
ID (A)a, b
- 2.7
- 2.2
Qg (Typ.)
4.1 nC
TO-236
(SOT-23)
G
1
S2
3D
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Portable Devices
S
G
RoHS
COMPLIANT
Top View
DTS3401


D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
± 20
TC = 25 °C
- 3.5
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
ID
- 2.8
- 2.7a, b
TA = 70 °C
- 2.2a, b
A
Pulsed Drain Current (10 µs Pulse Width)
IDM
- 12
Continuous Source-Drain Diode Currenta, b
TC = 25 °C
TA = 25 °C
IS
- 1.5
- 0.91a, b
TC = 25 °C
1.8
Maximum Power Dissipationa, b
TC = 70 °C
1.14
TA = 25 °C
PD
1.1a, b
W
TA = 70 °C
0.7a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
90
55
Maximum
115
70
Unit
°C/W
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