DTS2315 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 20 V (D-S) MOSFET TrenchFET Power MOSFET

P-Channel 20 V (D-S) MOSFET
DTS2315
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.065 at V_GS = - 4.5 V
- 20
0.090 at V_GS = - 2.5 V
0.1175 at V_GS = - 1.8 V
I_D (A)^a
- 4.5
- 3.7
- 3.3
Q_g (Typ.)
13.8 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Power Management for Portable and Consumer
- Load Switches
- DC/DC Converters
TO-236
(SOT-23)
G1
S2
3D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current (t = 300 µs)
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
I_S
P_D
T_J, T_stg
Limit
- 20
± 12
- 4.5
- 3.7
- 3.5^{b, c}
- 2.6^{b, c}
- 20
- 1.4
- 1^{b, c}
1.7
1.1
1^{b, c}
0.6^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Symbol
R_thJA
R_thJF
Typical
100
60
Maximum
130
75
Unit
V
A
W
°C
Unit
°C/W
1