DTS2312_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 20 V (D-S) MOSFET Halogen-free

N-Channel 20 V (D-S) MOSFET
DT6
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.033 at V_GS = 4.5 V
20
0.045 at V_GS = 2.5 V
0.051 at V_GS = 1.8 V
I_D (A)^e
3.8
3.6
2.6
Q_g (Typ.)
8.8 nC
SOT-23
G1
S2
3D
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Load Switch for Portable Applications
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
20
±8
3.8
3.1
3.8
3
20
1.75
1.04^{b, c}
2.1
1.3
1.25^{b, c}
0.8^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Based on T_C = 25 °C.
Symbol
R_thJA
R_thJF
Typical
80
40
Maximum
100
60
Unit
V
A
W
°C
Unit
°C/W
1