DTS2305_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 20 V (D-S) MOSFET Halogen-free

P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.065 at V_GS = - 4.5 V
0.090 at V_GS = - 2.5 V
0.110 at V_GS = - 1.8 V
0.165 at V_GS = - 1.5 V
I_D (A)^a
-4
- 3.8
- 3.3
- 0.5
Q_g (Typ.)
7.6 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Typical ESD Performance 1200 V
• AEC-Q101 Qualifiedc
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
S
G
Top View
DTS

Ordering Information: DTS2305 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 20
±8
-4
- 3.5
- 3.7^{b, c}
- 2.9^{b, c}
- 20
- 1.5
- 1.0^{b, c}
1.8
1.1
1.25^{b, c}
0.8^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Typical
80
55
Maximum
100
70
Unit
V
A
W
°C
Unit
°C/W
1