DTS2212_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – Dual N-Channel 20 V (D-S) MOSFET Halogen-free

Dual N-Channel 20 V (D-S) MOSFET
DT6
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.198 at V_GS = 4.5 V
0.225 at V_GS = 2.5 V
0.263 at V_GS = 1.8 V
I_D (A)^a
1.3^a
1.3^a
1.3^a
Q_g (Typ.)
0.9 nC
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Typical ESD Protection 2100 V HBM
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
D₁
D₂
G₁ 2
5 G₂
G₁
G₂
D₂ 3
4 S₂
Top View
S₁
S₂
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±8
T_C = 25 °C
1.3^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
1.3^a
1.3^{a, b, c}
T_A = 70 °C
1.2^{b, c}
A
Pulsed Drain Current
I_DM
4
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
1
0.61^{b, c}
T_C = 25 °C
1.25
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
0.8
0.74^{b, c}
W
T_A = 70 °C
0.47^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Symbol
R_thJA
R_thJF
Typical
130
80
Maximum
170
100
Unit
°C/W
1