DTS1004 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 100 V (D-S) MOSFET TrenchFET Power MOSFET

N-Channel 100 V (D-S) MOSFET
DTS1004
www.din-tek.jp
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
I_D (A)^a
0.234 at V_GS = 10 V
2.3
100
0.267 at V_GS = 6 V
2.1
0.278 at V_GS = 4.5 V
1.7
Q_g (Typ.)
2.9 nC
G1
S2
3D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Material categorization:
APPLICATIONS
• DC/DC Converters
• Load Switch
• LED Backlighting in LCD TVs
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
R_thJA
R_thJF
Typical
75
40
Limit
100
± 20
2.3
1.8
1.6^{b, c}
1.3^{b, c}
5
2.1
1.0^{b, c}
5
1.25
2.5
1.6
1.25^{b, c}
0.8^{b, c}
- 55 to 150
Maximum
100
50
Unit
V
A
mJ
W
°C
Unit
°C/W
1