DTS1003 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 100-V (D-S) MOSFET Halogen-free

P-Channel 100-V (D-S) MOSFET
DTS1003
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 100
1.2 at V_GS = - 10 V
1.3 at V_GS = - 6.0 V
I_D (A)
- 0.69
- 0.66
Q_g (Typ.)
7.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• Ultra Low On-Resistance
• Small Size
APPLICATIONS
• Active Clamp Circuits in DC/DC Power Supplies
TO-236
(SOT-23)
G1
S2
3D
Top View
DTS1003
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 100
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
- 0.69
- 0.55
- 0.53
- 0.43
Pulsed Drain Current
I_DM
- 1.6
A
Continuous Source Current (Diode Conduction)^{a, b}
I_S
- 1.0
- 0.6
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 1.0 mH
I_AS
4.5
E_AS
1.01
mJ
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.8
0.48
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
°C/W
1