DTP9531 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

DT1
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
I_D ^a
0.0065 at V_GS = - 10 V
- 29
- 30
0.0082 at V_GS = - 6 V
- 23
0.0112 at V_GS = - 4.5 V
- 20
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Q_g (Typ.)
66 nC
S
G
FEATURES
• Extended V_GS range (± 25 V) for adaptor switch
applications
• Extremely low R_DS(on)
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Typical ESD Performance: 4000 V (HBM)
APPLICATIONS
• Adaptor Switch, Load Switch
• Power Management
• Notebook Computers and Portable
Battery Packs
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 30
± 25
- 25.8
- 20.7
- 17.3
- 13.9^{b, c}
- 60
- 5.8^{b, c}
- 2.6^{b, c}
- 40
80
6.9
4.4
3.1^{b, c}
2^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
Symbol
R_thJA
R_thJF
Typical
33
15
Maximum
40
17
Unit
V
A
mJ
W
°C
Unit
°C/W
1