DTP9530 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
DT1
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0032 at V_GS = 10 V
30
0.0039 at V_GS = 4.5 V
I_D (A)^a
30
26.3
Q_g (Typ.)
26.5 nC
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• DC/DC Conversion
- Low-Side Switch
• Notebook PC
• Gaming
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
30
± 20
30
22.6
21.5^{b, c}
17.1^{b, c}
70
5.4
2.7^{b, c}
40
80
6.0
3.3
3.0^{b, c}
1.9^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
33
16
Maximum
42
21
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
1