DTP3006 Datasheet, PDF (1/7 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 60 V (D-S) MOSFET

P-Channel 60 V (D-S) MOSFET

DT1
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PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.0162 at V_GS = - 10 V
- 60
0.0230 at V_GS = - 4.5 V
I_D (A)
- 36
- 24
Q_g (Typ.)
67
TO-220AB
S
G
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
GD S
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
I_D
Pulsed Drain Current (t = 300 µs)
I_DM
Avalanche Current
I_AS
Single Avalanche Energy^a
L = 0.1 mH
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 60
± 20
- 36
- 29
- 100
- 32
51
41.7^b
2.1
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
60
3
Unit
V
A
mJ
W
°C
Unit
°C/W
1