DTP0403_13 Datasheet, PDF (1/7 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

N-Channel 30-V (D-S) MOSFET
DTP0403
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) ()
0.0038 at V_GS = 10 V
0.0044 at V_GS = 4.5 V
I_D (A)^{a, e}
98
98
Q_g (Typ)
82 nC
TO-220AB
D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
• DC/DC
G
GDS
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 175 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Avalanche Current Pulse
Single Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
30
± 20
98^{a, e}
98^e
28.8^{b, c}
27^{b, c}
90
36
64.8
90^{a, e}
3.13^{b, c}
250^a
175
3.75^{b, c}
2.63^{b, c}
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Case
t  10 sec
R_thJA
32
Steady State
R_thJC
0.5
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Max.
40
0.6
Unit
V
A
V
A
W
°C
Unit
°C/W
1