DTM9926 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – Dual N-Channel 2.5-V (G-S) MOSFET

Dual N-Channel 2.5-V (G-S) MOSFET
DT.
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.022 at V_GS = 4.5 V
20
0.030 at V_GS = 2.5 V
I_D (A)
6.5
5.5
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETs
Pb-free
Available
RoHS*
COMPLIANT
SO-8
S₁ 1
G₁ 2
S₂ 3
G_{2 4}
8 D1
7 ^D1
6 D2
5 ^D2
Top View
D₁
G₁
S₁
N-Channel MOSFET
D₂
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
6.5
5.2
5.5
3.5
A
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
1.5
1.0
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.5
1.0
0.96
0.64
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^a
t ≤ 10 s
Steady State
R_thJA
72
100
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
55
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Max.
83
120
70
Unit
°C/W
1