DTM9410 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
DT.
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0195 at V_GS = 10 V
0.023 at V_GS = 4.5 V
S1
S2
S3
G4
SO-8
Top View
8^D
7D
6D
5D
I_D (A)^a
8
8
Q_g (Typ.)
9.2 nC
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Load Switch
• Low Current dc-to-dc
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Limit
30
± 20
8^a
8^a
7.5^b,c
5.9^b,c
30
2.7
1.7^b,c
4.1
2.6
2^b,c
1.25^b,c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot
t≤5s
Steady State
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
45
25
Maximum
62.5
30
Unit
V
A
W
°C
Unit
°C/W
1