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DTM8205_13 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – Dual N-Channel 2.5-V (G-S) MOSFET Halogen-free
Dual N-Channel 2.5-V (G-S) MOSFET
DTM8205
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V
20
0.040 at VGS = 2.5 V
ID (A)
6.6
5.5
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFETs
Pb-free
Available
RoHS*
COMPLIANT
D1
S1 2
S1 3
G1 4
TSSOP-8
Top View
8D
7 S2
6 S2
5 G2
D
D
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
6.6
5.2
5.5
3.5
A
IDM
30
Continuous Source Current (Diode Conduction)a
IS
1.5
1.0
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.5
1.0
0.96
0.64
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
RthJA
72
100
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
55
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Max.
83
120
70
Unit
°C/W
1