DTM6910_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 100 V (D-S) MOSFET Halogen-free

N-Channel 100 V (D-S) MOSFET
DTM6910
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
100
R_DS(on) (Ω)
0.040 at V_GS = 10 V
0.047 at V_GS = 8 V
S1
S2
S3
G4
SO-8
Top View
8^D
7D
6D
5D
I_D (A)^a
6.4
5.5
Q_g (Typ.)
23 nC
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Q_gd for Switching Losses
• 100 % R_g Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
100
± 20
6.4
5.1
5.5^{b, c}
4.5^{b, c}
50
4.5
2.6^{b, c}
20
20
5.9
3.8
3.1^{b, c}
2^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
Symbol
R_thJA
R_thJF
Typical
33
17
Maximum
40
21
Unit
V
A
mJ
W
°C
Unit
°C/W
1