DTM4964 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET
DT.
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
60
0.036 at V_GS = 10 V
0.043 at V_GS = 4.5 V
I_D (A)^d
8
8
Q_g (Typ.)
10.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Optimized for “Low Side” Synchronous
Rectifier Operation
• 100 % R_g and UIS Tested
APPLICATIONS
• CCFL Inverter
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Limit
60
± 20
8^a
6.8
6.1^{b, c}
4.8^{b, c}
25
4.2
2.1^{b, c}
15
11.2
5
3.2
2.5^{b, c}
1.6^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
38
20
Maximum
50
25
Unit
V
A
mJ
W
°C
Unit
°C/W
1