DTM4936 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET
DT.
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0355 at V_GS = 10 V
30
0.044 at V_GS = 4.5 V
I_D (A)
6.5
5.8
Q_g (Typ.)
3.7 nC
SO-8
S₁ 1
G₁ 2
S₂ 3
G_{2 4}
8 D1
7 ^D1
6 D2
5 ^D2
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Set Top Box
• Low Current DC/DC
D₁
D₂
G₁
S₁
N-Channel MOSFET
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
6.5^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
5.2
5.2^{b, c}
Pulsed Drain Current
T_A = 70 °C
4.2^{b, c}
A
I_DM
24
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.25
1.48^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
5
Single Pulse Avalanche Energy
E_AS
1.25
mJ
T_C = 25 °C
2.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.77
1.78^{b, c}
W
T_A = 70 °C
1.14^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package limited, T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
58
38
Maximum
70
45
Unit
°C/W
1