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DTM4830_13 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 80 V (D-S) MOSFET Halogen-free
N-Channel 80 V (D-S) MOSFET
DTM4830
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
80
0.075 at VGS = 10 V
ID (A)a
3.5
Qg (Typ.)
7.3 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Conversion
- Notebook System Power
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
Power Dissipation B
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
80
±30
3.5
2.9
18
16
12.8
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Symbol
Typ
t ≤ 10s
Steady-State
RθJA
48
74
Steady-State
RθJL
32
Max
62.5
90
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W