DTM4606 Datasheet, PDF (1/14 Pages) DinTek Semiconductor Co,.Ltd – N- and P-Channel 30 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET
DT.
www.daysemi.jp
PRODUCT SUMMARY
N-Channel
P-Channel
V_DS (V)
30
- 30
R_DS(on) (Ω)
0.0355 at V_GS = 10 V
0.0425 at V_GS = 4.5 V
0.045 at V_GS = - 10 V
0.062 at V_GS = - 4.5 V
I_D (A)^{a Q}g ^(Typ.)
6.8
5.3
6.2
- 5.8
11.8
- 5.0
SO-8
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Backlight Inverter for LCD Display
• Full Bridge Converter
D₁
S₂
S_{1 1}
8 ^D1
G_{1 2}
7 ^D1
G₂
G₁
S_{2 3}
6 ^D2
G_{2 4}
5 ^D2
Top View
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
V_DS
30
- 30
Gate-Source Voltage
V_GS
± 20
T_C = 25 °C
6.8
- 5.8
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
5.4
5.6^{b, c}
- 4.7
- 4.7^{b, c}
T_A = 70 °C
4.4^{b, c}
- 3.7^{b, c}
Pulsed Drain Current
I_DM
20
- 20
Source-Drain Current Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.5
1.6^{b, c}
- 2.5
- 1.6^{b, c}
Pulsed Source-Drain Current
I_SM
20
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I_AS
7
- 10
L = 0 1 mH
E_AS
2.45
5
T_C = 25 °C
3.0
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.9
2.0^{b, c}
2
2.0^{b, c}
T_A = 70 °C
1.25^{b, c}
1.25^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Symbol
R_thJA
R_thJF
N-Channel
Typ.
Max.
54
64
33
42
P-Channel
Typ.
Max.
49
62.5
30
40
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
1