DTM4485 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

P-Channel 30-V (D-S) MOSFET
DTM4485
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.042 at V_GS = - 10 V
- 30
0.072 at V_GS = - 4.5 V
I_D (A)^{a, e}
-6
-6
Q_g (Typ.)
7 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
S
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
T_C = 25 °C
- 6^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 6^e
- 5.9^{b, c}
T_A = 70 °C
- 4.7^{b, c}
A
Pulsed Drain Current
I_DM
- 25
Continous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 4.2
- 2^{b, c}
T_C = 25 °C
5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.2
2.4^{b, c}
W
T_A = 70 °C
1.5^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
R_thJA
R_thJF
Typical
42
19
Maximum
53
25
Unit
°C/W
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
e. Package Limited.
1