DTM4483S Datasheet, PDF (1/11 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30 V (D-S) MOSFET with Schottky Diode

DTM4483S
www.din-tek.jp
P-Channel 30 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
- 30
R_DS(on) ()
0.068 at V_GS = - 10 V
0.110 at V_GS = - 4.5 V
I_D (A)^a
- 4.6
- 3.4
Q_g (Typ.)
4.6
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
30
V_F (V)
Diode Forward Voltage
0.44 V at 1 A
I_D (A)^a
2
A1
A2
S3
G4
SO-8
8^K
7K
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Battery Management in Notebook PC
• Non-synchronous Buck Converter in HDD
S
K
G
Top View
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V_DS
- 30
Reverse Voltage (Schottky)
V_KA
- 30
V
Gate-Source Voltage (MOSFET)
V_GS
± 20
T_C = 25 °C
- 4.6
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
- 3.6
- 3.8^{b, c}
T_A = 70 °C
- 3^{b, c}
Pulsed Drain Current (MOSFET) (t = 300 µs)
I_DM
- 20
A
Continuous Source Current (MOSFET Diode Conduction)
T_C = 25 °C
T_A = 25 °C
I_S
-2
- 1.4^{b, c}
Average Forward Current (Schottky)
I_F
- 1.4^b
Pulsed Forward Current (Schottky)
I_FM
-2
T_C = 25 °C
2.75
Maximum Power Dissipation (MOSFET and Schottky)
T_C = 70 °C
T_A = 25 °C
P_D
1.75
1.75^{b, c}
W
T_A = 70 °C
1.10^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)^{b, c, d}
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on FR4 board.
c. t  10 s.
d. Maximum under steady state conditions is 120 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
35
Maximum
71.5
45
Unit
°C/W
1