DTM4435_13 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

P-Channel 30-V (D-S) MOSFET
DTM4435
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = - 10 V
R_DS(on) () at V_GS = - 4.5 V
I_D (A)
Configuration
- 30
0.016
0.022
-8
Single
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Adaptor Switch
• Notebook
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
- 30
± 20
-8
- 6.7
- 6.2
- 60
- 25
31
6.8
2.3
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount^b
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 80 °C/W.
d. Based on T_C = 25 °C.
SYMBOL
R_thJA
R_thJF
LIMIT
85
22
UNIT
V
A
mJ
W
°C
UNIT
°C/W
1