DTM4425 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
DT.
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0098 at V_GS = 10 V
- 30
0.0165 at V_GS = 4.5 V
I_D (A)^a
- 19.7
- 15.2
Q_g (Typ.)
27 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
T_C = 25 °C
- 19.7
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 15.7
- 13^{b, c}
T_A = 70 °C
- 10.4^{b, c}
A
Pulsed Drain Current
I_DM
- 50
Continous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 4.7
- 2.1^{b, c}
T_C = 25 °C
5.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.6
2.5^{b, c}
W
T_A = 70 °C
1.6^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
35
18
Maximum
50
22
Unit
°C/W
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
www.GD\VHPLMS
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