DTM4420B Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 30-V (D-S) MOSFET Halogen-free

N-Channel 30-V (D-S) MOSFET
DTM4420B
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.007 at V _GS= 10 V
0.009 at V_GS = 4.5 V
I_D (A)^a
15
13
Q_g (Typ.)
6.8 nC
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % R_g Tested
• 100 % UIS Tested
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
D
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
± 20
V
T_C = 25 °C
15
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
12
11^{b, c}
Pulsed Drain Current
T_A = 70 °C
I_DM
9^{b, c}
50
A
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
3.8
2.1^{b, c}
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
22
E_AS
24
mJ
T_C = 25 °C
4.5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.8
2.5^{b, c}
W
T_A = 70 °C
1.6^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Base on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
38
22
Maximum
50
28
Unit
°C/W
1