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DTM4415_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30-V (D-S) MOSFET 100 % Rg Tested
P-Channel 30-V (D-S) MOSFET
DTM4415
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.0092 at VGS = - 10 V
0.0128 at VGS = - 4.5 V
ID (A)d
- 13.5
- 11.6
Qg (Typ.)
29.5 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
SO-8
S
S1
8D
S2
7D
G
S3
6D
G4
5D
Top View
Ordering Information: Si4825DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 25
- 13.5
- 11.9
- 10.9a, b
- 8.6a, b
- 60
- 4.1
- 2.2a, b
- 20
20
5.0
3.2
2.7a, b
1.7a, b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
46
25
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
1