DTM4410_13 Datasheet, PDF (1/9 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 30-V (D-S) MOSFET 100 % Rg and UIS Tested

N-Channel 30-V (D-S) MOSFET
DTM4410
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0045 at V_GS = 10 V
30
0.0065 at V_GS = 4.5 V
S1
S2
S3
G4
SO-8
Top View
8^D
7D
6D
5D
I_D (A)^a
18
14.5
Q_g (Typ.)
8 nC
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
30
± 20
18
13.5
12^{b, c}
9.6^{b, c}
50
4.5
2.2^{b, c}
20
20
5
3.2
2.5^{b, c}
1.6^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
38
20
Maximum
50
25
Unit
V
A
mJ
W
°C
Unit
°C/W
1