DTL9604_13 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 60 V (D-S) MOSFET Low Qg for High Efficiency

N-Channel 60 V (D-S) MOSFET
DTL9604
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
60
R_DS(on) ()
0.0022 at V_GS = 10 V
0.0025 at V_GS = 6 V
0.0028 at V_GS = 4.5 V
TO-220AB
I_D (A)^a
55
55
50
Q_g (Typ.)
27.5 nC
D
GD S
Top View
G
S
N-Channel MOSFET
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Low Q_g for High Efficiency
APPLICATIONS
• Primary Side Switch
• POL
• Synchronous Rectifier
• DC/DC Converter
• Amusement System
• Industrial
• LED Backlighting
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (60 µs Pulse Width)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
60
± 20
55^a
55^a
35.8^{b, c}
28.6^{b, c}
350
55^a
5.6^{b, c}
40
80
104
66.6
6.25^{b, c}
4^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
t  10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
15
0.9
Maximum
20
1.2
Unit
V
A
mJ
W
°C
Unit
°C/W
1