DTL40P03 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

P-Channel 30-V (D-S) MOSFET
DTL40P03
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0055 at V_GS = - 10 V
- 30
0.0090 at V_GS = - 4.5 V
TO-251
I_D (A)
- 40^d
- 40^d
Q_g (Typ.)
49.5 nC
S
G
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100% R_g Tested
• 100% UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Computer
- Adaptor Switch
- Battery Switch
- Load Switch
D
GDS
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Soldering Recommendations (Peak Temperature)^{e, f}
Limit
- 30
± 20
- 40^d
- 40^d
- 22.4^{a, b}
- 17.9^{a, b}
- 70
- 40^d
- 4.5^{a, b}
- 30
45
48
30
5.0^{a, b}
3.2^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 70 °C/W.
d. Package limited.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
20
2.1
Maximum
25
2.6
Unit
V
A
mJ
W
°C
Unit
°C/W
1