DTL15P03 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
D5-1
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.018 at V_GS = - 10 V
- 30
0.0305 at V_GS = - 4.5 V
TO-251
I_D (A)
- 16^d
- 16^d
Q_g (Typ.)
22 nC
S
G
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100% R_g Tested
• 100% UIS Tested
APPLICATIONS
• Notebook Battery Charging
• Notebook Adapter Switch
RoHS
COMPLIANT
D
GDS
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
P_D
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
- 30
± 25
- 16^d
- 16^d
- 10.6^{a, b}
- 8.6^{a, b}
- 50
- 16^d
- 3.0^{a, b}
- 20
20
52
33
3.7^{a, b}
2.4^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 81 °C/W.
d. Package limited.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
26
1.9
Maximum
33
2.4
Unit
V
A
mJ
W
°C
Unit
°C/W
1