DTE2312_13 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – N-Channel 20-V (D-S) MOSFET Halogen-free

N-Channel 20-V (D-S) MOSFET
DTE2312
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0193 at V_GS = 10 V
20
0.022 at V_GS = 4.5 V
0.028 at V_GS = 2.5 V
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
I_D (A)^a
4.8
4.8
4.5
Q_g (Typ.)
7.9 nC
D
G
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• New Thermally Enhanced PowerPAK^®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % R_g Tested
APPLICATIONS
• Load Switch
S
N-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
20
± 12
4.8^a
4.5^a
4.8^{a, b, c}
4.5^{a, b, c}
20
4.5^a
2.9^{b, c}
1.9
1.2
0.5^{b, c}
0.2^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
t≤5s
Steady State
Symbol
R_thJA
R_thJC
Typical
28
5.3
Maximum
36
6.5
Unit
V
A
W
°C
Unit
°C/W
1