DTC2059 Datasheet, PDF (1/8 Pages) DinTek Semiconductor Co,.Ltd – P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET
D5$
www.daysemi.jp
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.036 at V_GS = - 4.5 V
0.041 at V_GS = - 3.6 V
0.056 at V_GS = - 2.5 V
D
I_D (A)
- 6^a
- 6^a
- 6^a
Q_g (Typ.)
12.5 nC
S
G
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices
- Load Switch
- Charger Switch
- Battery Switch
- DC/DC Converter
GD S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
- 20
± 12
- 6^a
- 6^a
- 6^{a, b, c}
- 5.2^{b, c}
- 20
- 4.8
- 1.9^{b, c}
5.7
3
2.3^{b, c}
1.2^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
t≤5s
Steady State
Symbol
R_thJA
R_thJF
Typical
45
18
Maximum
55
22
Unit
V
A
W
°C
Unit
°C/W
1