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DT2300A Datasheet, PDF (1/7 Pages) DinTek Semiconductor Co,.Ltd – Silicon N Channel MOS FET Power Switching
Din-Tek
'7$
Silicon N Channel MOS FET
Power Switching
Features
 Low on-resistance
RDS(on) = 2 m typ (VGS = 4.5 V, ID = 2.4 A)
 Low drive current
 High speed switching
 2.5 V gate drive
Outline
DIN-TEK Package code: PLSP0003ZB-A
(Package name: SOT-23)
3
1
2
Note: Marking is “D018L”.
Preliminary Datasheet
DINDS0301EJ0400
(Previous: DIN03G1321-0300)
Rev.4.00
Mar 28, 2011
3
D
G
1. Source
2
2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse) Note1
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
20
12
5.2
15
5.2
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
C
C
DINDS0301EJ0400 Rev.4.00
Mar 28, 2011
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