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| T4120 Datasheet, PDF (1/2 Pages) Motorola, Inc – Triacs Silicon Bidirectional Triode Thyristors | |||
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DIGITRON SEMICONDUCTORS
T4120 SERIES
BIDIRECTIONAL TRIODE THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as âHRâ (high reliability) screened per MIL-PRF-19500, JANTX level. Add âHRâ suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Repetitive peak off-stage voltage(1)
(TJ = -65 to +100°C, gate open)
T4120B
T4120D
T4120M
VDRM
200
400
600
Volts
RMS on-state current (conduction angle = 360°, TC ⤠75°C)
IT(RMS)
15
Amps
Peak non-repetitive surge current (One Cycle, 60Hz)
ITSM
100
Amps
Circuit fusing considerations
(TC = -65 to +100°C, t = 1.25 to 10ms)
I2t
A2s
50
Peak gate power (pulse width = 1.0µs)
PGM
16
Watts
Average gate power
PG(AV)
0.5
Watts
Peak trigger current (pulse width = 1.0µs)
IGM
4
Amps
Operating junction temperature range
TJ
-65 to +100
°C
Storage temperature range
Tstg
-65 to +150
°C
Stud torque
30
In. lb.
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Symbol
RÓ¨JC
Max
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Peak off state current
(Rated VDRM @ TC = 100°C)
IDRM
-
mA
-
2
Peak on-state voltage
(ITM = 21A peak)
DC gate trigger current (continuous dc)(2)
(VD = 12V, RL = 30â¦)
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-); MT2(-), G(+)
MT2(+), G(+); MT2(-), G(-), TC = -65°C
MT2(+), G(-); MT2(-), G(+), TC = -65°C
VTM
Volts
-
1.4
1.8
-
-
50
IGT
mA
-
-
80
-
-
150
-
-
200
DC gate trigger voltage (continuous dc), all quadrants
(VD = 12V, RL = 30â¦)
(VD = 12V, RL = 30â¦, TC = -65°C)
(VD = Rated VDRM, RL = 125â¦, TC = 100°C)
Holding current
(VD = 12V, gate open, IT = 500mA, TC = 25°C)
(VD = 12V, gate open, IT = 500mA, TC = -65°C)
-
-
2.5
VGT
Volts
-
-
4.0
0.2
-
-
IH
-
-
75
mA
-
-
300
Gate controlled turn on time
(VD = Rated VDRM, IT = 25A, IGT = 160mA, rise time = 0.1µs)
tgt
µs
-
1.6
2.5
Critical rate of rise of commutating voltage
dv/dt(c)
V/µs
(Rated VDRM, IT(RMS) = 15A, commutating di/dt = 8A/ms, gate unenergized, TC = 75°C)
2
10
-
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130206
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