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| T2801 Datasheet, PDF (1/2 Pages) ATMEL Corporation – DECT Single-Chip Transceiver | |||
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DIGITRON SEMICONDUCTORS
T2801 SERIES
BIDIRECTIONAL TRIODE THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as âHRâ (high reliability) screened per MIL-PRF-19500, JANTX level. Add âHRâ suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Repetitive peak off-stage voltage(1)
(TJ = -40 to +100°C, gate open)
T2801B
T2801C
T2801D
T2801E
T2801M
VDRM
200
300
400
500
600
Volts
RMS on-state current (conduction angle = 360°, TC = 80°C)
IT(RMS)
6
Amps
Peak non-repetitive surge current (One Cycle, 60Hz)
ITSM
80
Amps
Circuit fusing considerations
(TJ = -40 to +100°C, t = 1 to 8.3ms)
I2t
A2s
35
Peak gate power (pulse width = 2.0µs, TC = 80°C)
PGM
16
Watts
Average gate power (TC = 80°C, t = 8.3ms)
PG(AV)
0.35
Watts
Peak trigger current (pulse width = 1.0µs)
IGM
4
Amps
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Symbol
RÓ¨JC
Max
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Peak off state current
(Rated VDRM @ TJ = 100°C)
IDRM
-
mA
-
2
Peak on-state voltage
(ITM = 30A peak, pulse width = 1 to 2ms, duty cycle ⤠2%)
VTM
-
DC gate trigger current (continuous dc)(2)
(VD = 12V, RL = 12â¦)
IGT
-
DC gate trigger voltage (continuous dc) (2)
(VD = 12V, RL = 12â¦)
(VD = VDRM, RL = 125â¦, TC = 100°C)
VGT
-
0.2
Holding current (either direction)
(VD = 12V, gate open, IT = 150mA)
IH
-
Gate controlled turn on time(2)
(VD = Rated VDRM, IT = 10A, IGT = 80mA, rise time = 0.1µs)
tgt
-
Critical rate of rise of commutating voltage
dv/dt(c)
(Rated VDRM, IT(RMS) = 6A, commutating di/dt = 4.3A/ms, gate unenergized, TC = 80°C)
-
Critical rate of rise of off-state voltage
(Rated VDRM, exponential voltage rise, gate open, TC = 100°C)
T2801B
T2801C
50
dv/dt
40
T2801D
30
T2801E
20
Note 2: Applies for MT2(+), G(+); MT2(-), G (-)
2
25
1.5
-
100
2.2
10
-
-
-
-
Volts
3
mA
80
4
Volts
-
mA
-
µs
-
V/µs
-
-
V/µs
-
-
-
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130206
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