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T2500 Datasheet, PDF (1/2 Pages) Motorola, Inc – TRIACs 6 AMPERES RMS 200 thru 800 VOLTS
DIGITRON SEMICONDUCTORS
T2500 SERIES
BIDIRECTIONAL TRIODE THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Repetitive peak off-stage voltage(1)
(TJ = -40 to +100°C, gate open)
T2500B
T2500D
T2500M
T2500N
VDRM
200
400
600
800
Volts
RMS on-state current (full sine wave 50 to 60Hz, TC = 80°C)
IT(RMS)
6
Amps
Peak non-repetitive surge current (One Cycle, 60Hz, TC = 80°C)
ITSM
60
Amps
Circuit fusing considerations
(TJ = -40 +100°C, t = 1.25 to 10ms)
I2t
A2s
18
Peak gate power (TC = 80°C, pulse width = 1.0µs)
PGM
16
Watts
Average gate power (TC = 80°C, t = 8.3ms)
PG(AV)
0.2
Watts
Peak trigger current (pulse width = 10µs)
IGM
4
Amps
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Symbol
RÓ¨JC
Max
2.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Peak off state current
(Rated VDRM @ TJ = 100°C, gate open)
IDRM
-
-
2
Peak on-state voltage
(ITM = 30A peak)
DC gate trigger current (continuous dc)
(VD = 12V, RL = 12Ω)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
VTM
-
-
2
-
10
25
IGT
-
20
60
-
15
25
-
30
60
DC gate trigger voltage (continuous dc) all quadrants
(VD = 12V, RL = 12Ω)
(VD = VDRM, RL = 125Ω, TC = 100°C)
VGT
-
1.25
2.5
0.2
-
-
Holding current (either direction)
(VD = 12V, gate open, IT = 150mA, TC = 25°C)
IH
-
15
30
Gate controlled turn on time
(VD = Rated VDRM, IT = 10A, IGT = 160mA, rise time = 0.1µs)
tgt
-
1.6
-
Critical rate of rise of commutating voltage
dv/dt(c)
(Rated VDRM, IT(RMS) = 6A, commutating di/dt = 3.2A/ms, gate unenergized, TC = 80°C)
-
10
-
Critical rate of rise of off-state voltage
(Rated VDRM, exponential voltage rise, gate open, TC = 100°C)
T2500B
dv/dt
100
-
-
T2500D, M, N
75
-
-
Unit
mA
Volts
mA
Volts
mA
µs
V/µs
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130206
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