T2322 Datasheet, PDF (1/2 Pages) Motorola, Inc – SENSITIVE GATE TRIACs 2.5 AMPERES RMS 200 thru 600 VOLTS

DIGITRON
T2322, T2323 SERIES
SENSITIVE GATE TRIACS
SEMICONDUCTORS
SILICON BIDIRECTIONAL THYRISTORS
2.5 AMPERES RMS; 50 THROUGH 600 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Suffix
Symbol
Peak Repetitive Off-State Voltage ^{(Note 1)}
(T_J = 25 to 100°C, Gate Open)
T2322, T2323
F
A
B
C
V_DRM
D
E
M
RMS On-State Current (T_C = 70°C)
(Full Cycle Sine Wave 50 to 60 Hz)
I_T(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz)
I_TSM
Circuit Fusing (t ≤ 8.3ms)
I²t
Peak-Gate Power (1µs)
Average Gate Power
(T_C = 60°C)
P_GM
P_G(AV)
Peak Gate Current (1µs)
I_GM
Operating Junction Temperature Range
T_J
Storage Temperature Range
T_stg
Mounting Torque (6-32 Screw) ^{(Note 2)}
-
Value
50
100
200
300
400
500
600
2.5
25
2.6
10
0.15
0.5
-40 to +110
-40 to +150
8.0
Unit
V
A
A
A²s
W
W
A
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Symbol
R_θJC
R_θJA
Max
3.5
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted; Electrical characteristics apply in both directions)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(V_D = Rated V_DRM, Gate Open)
T_J = 25°C
T_J = 100°C
I_DRM
Peak On-State Voltage ^{(Note 3)}
(I_TM = 10A)
T2323 Series
T2322 Series
V_TM
Gate Trigger Current (Continuous dc)
(V_D = 12V, R_L = 30Ω)
All Modes
MT2(+), G(+); MT2(-), G(-)
T2322 Series
I_GT
T2323 Series
MT2(+), G(-); MT2(-), G (+)
T2323 Series
-
-
-
0.2
-
1.7
-
1.7
-
-
-
-
-
-
10
µA
0.75
mA
2.6
V
2.2
10
mA
25
40
Gate Trigger Voltage (Continuous dc)
(V_D = 12 Vdc, R_L = 30Ω, T_C = 25°C)
(V_D = V_DRM, R_L = 125Ω, T_C = 100°C)
Holding Current
(V_D = 12V, I_TM = 150mA, Gate Open)
Gate Controlled Turn-On Time
(V_D = Rated V_DRM, I_TM = 10A pk, I_G = 60mA)
Critical Rate of Rise of Off-State Voltage
(V_D = Rated V_DRM, Exponential Waveform, T_C = 100°C)
V_GT
I_H
t_gt
dv/dt
-
0.15
-
-
10
1
-
15
1.8
100
2.2
V
-
30
mA
2.5
µs
-
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Revised: 20130201