MUR470E Datasheet, PDF (1/3 Pages) Digitron Semiconductors – 4A SCHOTTKY RECTIFIER

DIGITRON SEMICONDUCTORS
MUR470E-MUR4100E
4A SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current (square wave)
Mounting method 3, per note 2
Non-repetitive peak surge current
(surge applied at rated load conditions halfwave, single
phase, 60Hz)
Operating and storage junction temperature range
Maximum thermal resistance
Junction to ambient
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
T_J, T_stg
R_Ó¨JA
470E
700
MUR
480E
490E
800
900
4.0 @ T_A = 35°C
70
-65 to +175
Note 1
4100E
1000
Unit
V
A
A
°C
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Parameter
Symbol
470E
MUR
480E
490E
Maximum instantaneous forward voltage ⁽¹⁾
(I_F = 3.0A, T_J = 150°C)
(I_F = 3.0A, T_J = 25°C)
V_F
(I_F = 4.0A, T_J = 25°C)
Maximum instantaneous reverse current ⁽¹⁾
(Rated dc voltage, T_J = 100°C)
I_R
(Rated dc voltage, T_J = 25°C)
1.53
1.75
1.85
900
25
Maximum reverse recovery time
(I_F = 1.0A, di/dt = 50A/µs)
t_rr
100
(I_F = 0.5A, I_R = 1.0A, I_REC = 0.25A)
75
Maximum forward recovery time
(I_F = 1.0A, di/dt = 100A/µs, recovery to 1.0V)
t_fr
75
Controlled avalanche energy
W_AVAL
20
Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%.
Note 2: PC board with 1 ½” x 1 ½” copper surface.
MECHANICAL CHARACTERISTICS
Case
DO-201A
Marking
Body painted, alpha-numeric
Polarity
Cathode band
4100E
Unit
V
µA
ns
ns
mJ
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121128