MUR170E Datasheet, PDF (1/3 Pages) Digitron Semiconductors – 1A SCHOTTKY RECTIFIER

DIGITRON SEMICONDUCTORS
MUR170E-MUR1100E
1A SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current (square wave)
Mounting method per note 2
Non-repetitive peak surge current
(surge applied at rated load conditions halfwave, single
phase, 60Hz)
Operating and storage junction temperature range
Maximum thermal resistance
Junction to ambient
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
T_J, T_stg
R_Ó¨JA
170E
700
MUR
180E
190E
800
900
1.0 @ T_A = 95°C
35
-65 to +175
Note 1
1100E
1000
Unit
V
A
A
°C
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage ⁽¹⁾
(I_F = 1.0A, T_J = 150°C)
(I_F = 1.0A, T_J = 25°C)
Maximum instantaneous reverse current ⁽¹⁾
(Rated dc voltage, T_J = 100°C)
(Rated dc voltage, T_J = 25°C)
Maximum reverse recovery time
(I_F = 1.0A, di/dt = 50A/µs)
(I_F = 0.5A, I_R = 1.0A, I_REC = 0.25A)
Maximum forward recovery time
(I_F = 1.0A, di/dt = 100A/µs, I_REC to 1.0V)
Controlled avalanche energy
Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%.
Note 2: PC board with 1 ½” x 1 ½” copper surface.
Symbol
V_F
170E
I_R
t_rr
t_fr
W_AVAL
180E
MUR
1.50
1.75
600
10
100
75
75
10
190E
MECHANICAL CHARACTERISTICS
Case
DO-41
Marking
Body painted, alpha-numeric
Polarity
Cathode band
1100E
Unit
V
µA
ns
ns
mJ
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121128