MUR105 Datasheet, PDF (1/3 Pages) Jinan Gude Electronic Device – 1.0 AMPS. ULTRA FAST RECTIFIERS

DIGITRON SEMICONDUCTORS
MUR105-MUR160
1A SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Symbol
105
110
MUR
115 120
130
140
160
Unit
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current (square wave)
Mounting method per note 2
V_RRM
V_RWM
V_R
I_F(AV)
50
100 150 200 300 400 600
V
1.0 @ T_A = 130°C
1.0 @ T_A = 120°C
A
Non-repetitive peak surge current
(surge applied at rated load conditions halfwave, single
I_FSM
35
A
phase, 60Hz)
Operating and storage junction temperature range
T_J, T_stg
-65 to +175
°C
Maximum thermal resistance
Junction to ambient
R_Ó¨JA
Note 2
°C/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not
implied. Extended exposure to stresses above the recommended operating conditions may affect the device reliability.
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage ⁽¹⁾
(I_F = 1.0A, T_J = 150°C)
(I_F = 1.0A, T_J = 25°C)
Maximum instantaneous reverse current ⁽¹⁾
(Rated dc voltage, T_J = 150°C)
(Rated dc voltage, T_J = 25°C)
Maximum reverse recovery time
(I_F = 1.0A, di/dt = 50A/µs)
(I_F = 0.5A, I_R = 1.0A, I_REC = 0.25A)
Maximum forward recovery time
(I_F = 1.0A, di/dt = 100A/µs, recovery to 1.0V)
Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%.
Note 2: PC board with 1 ½” x 1 ½” copper surface.
Symbol
105 110 115
V_F
0.710
0.875
I_R
50
2.0
t_rr
35
25
t_fr
25
MECHANICAL CHARACTERISTICS
Case
DO-41
Marking
Body painted, alpha-numeric
Polarity
Cathode band
MUR
120
130 140 160
1.050
1.250
150
5.0
75
50
50
Unit
V
µA
ns
ns
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121128